A single-source precursor approach to solution processed indium arsenide thin films
نویسندگان
چکیده
منابع مشابه
Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors
We investigated the influence of low-concentration indium (In) doping on the chemical and structural properties of solution-processed zinc oxide (ZnO) films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs). The thermogravimetry and differential scanning calorimetry analysis results showed that thermal annealing at 400 °C for 40 min produces...
متن کاملSolution Processed Silver Sulfide Thin Films for Filament Memory Applications
Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. To copy otherwise, to republish, to post on servers or to redistribute to lists, requires prior specific permission....
متن کاملSolution-processed zinc tetrabenzoporphyrin thin-films and transistors
a r t i c l e i n f o Thin-films and organic field-effect transistors fabricated from a solution-processable precursor of zinc tetra-benzoporphyrin (ZnTBP) are reported. Amorphous, insulating precursor films were deposited by spin-casting and thermally converted into polycrystalline, semiconducting thin-films comprising grains on the order of 5 μm in diameter. Thin-film X-ray diffraction indica...
متن کاملPerovskite-structured PbTiO3 thin films grown from a single-source precursor.
Perovskite-structured lead titanate thin films have been grown on FTO-coated glass substrates from a single-source heterometallic molecular complex, [PbTi(μ2-O2CCF3)4(THF)3(μ3-O)]2 (1), which was isolated in quantitative yield from the reaction of tetraacetatolead(IV), tetrabutoxytitanium(IV), and trifluoroacetic acid from a tetrahydrofuran solution. Complex 1 has been characterized by physicoc...
متن کاملLi-Assisted Low-Temperature Phase Transitions in Solution-Processed Indium Oxide Films for High-Performance Thin Film Transistor.
Lithium (Li)-assisted indium oxide (In2O3) thin films with ordered structures were prepared on solution-processed zirconium oxide (ZrO2) gate dielectrics by spin-casting and thermally annealing hydrated indium nitrate solutions with different Li nitrate loadings. It was found that the Li-assisted In precursor films on ZrO2 dielectrics could form crystalline structures even at processing tempera...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Materials Chemistry C
سال: 2016
ISSN: 2050-7526,2050-7534
DOI: 10.1039/c6tc02293f